IGBT Infineon FF150R12KS4_B2

IGBT Power Module – FF150R12KS4_B2
Product code: FF150R12KS4_B2

Key Parameter Value
Category IGBT Power Module
Collector-Emitter Voltage (VCES) 1200 V
Nominal Collector Current (IC nom) 150 A
Maximum DC Collector Current (IC) 225 A (TC = 25 °C, Tvj max = 150 °C)
Peak Collector Current (ICRM) 300 A (tp = 1 ms)
Technology Fast IGBT2 for high-frequency switching
Configuration Inverter / Half-Bridge (IGBT + Freewheeling Diode)
Gate-Emitter Voltage (VGES) ±20 V
Total Power Dissipation (Ptot) 1250 W