IGBT Infineon FF1200R17KP4_B2

Module IGBT Infineon FF1200R17KP4_B2

Collector-emitter voltage (VCES) 1700 V
Nominal collector current (ICnom) 1200 A
Repetitive peak collector current (ICRM) 2400 A
Collector-emitter saturation voltage (VCEsat) 1.9 V (typ., Tvj = 25 °C)
Turn-on energy (Eon) 370 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 510 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–case (RthJC) 0.020 K/W (per IGBT)
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4000 V AC
Integrated freewheeling diode 1700 V / 1200 A, VF = 1.65 V (Tvj = 25 °C typ)
Integrated temperature sensor —
Package: IGBT module with AlSiC baseplate and AlN internal insulation
Technology IGBT4 - P4

Title:
FF1200R17KP4_B2 | IGBT Module 1700V 1200A – FOIND
FF1200R17KP4_B2 Infineon IGBT module 1700V 1200A with integrated freewheeling diode (VF = 1.65 V). FOIND solutions for industrial inverters, traction applications and high-power drive systems.