IGBT Infineon FF1200R12IE5P

Module IGBT Infineon FF1200R12IE5P

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 1200 A
Repetitive peak collector current (ICRM) 2400 A
Collector-emitter saturation voltage (VCEsat) 1.9 V (typ., Tvj = 25 °C)
Turn-on energy (Eon) 120 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 160 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–heatsink (RthJH) 39.4 K/kW (per IGBT, with pre-applied TIM)
Max operating junction temperature (Tvj) 175 °C
Isolation voltage (VISOL) 4000 V AC
Integrated freewheeling diode 1200 V / 1200 A, VF = 1.7 V (Tvj = 25 °C typ)
Integrated temperature sensor NTC
Package: PrimePACK™ 2 IGBT module, Cu baseplate, Al₂O₃ internal insulation, pre-applied TIM
Technology IGBT5 - E5

Title:
FF1200R12IE5P | IGBT Module 1200V 1200A PrimePACK 2 – FOIND
FF1200R12IE5P Infineon PrimePACK2 IGBT module 1200V 1200A with integrated diode (VF = 1.7 V) and NTC sensor, including pre-applied TIM. FOIND solutions for industrial inverters, traction drives, and high-power converter applications.