IGBT Infineon FS225R12OE4P

IGBT Module – FS225R12OE4P
Product code: FS225R12OE4P

Parameter Value
Category IGBT Power Module
Voltage (VCES) 1200 V
Nominal Current (IC nom) 225 A
Maximum DC Collector Current (IC) 225 A (TH = 80 °C, Tvj max = 175 °C)
Peak Collector Current (ICRM) 450 A (tp = 1 ms)
Technology Trench / Fieldstop IGBT4 + Emitter Controlled HE Diode
Configuration Inverter / 3-phase bridge (IGBT + Freewheeling Diode)
Gate–Emitter Voltage (VGES) ±20 V
VCE(sat) (typ.) 1.85 V @ 25 °C / 2.10 V @ 125 °C / 2.15 V @ 150 °C