Diode IXYS MDD810-12N2

Diode IXYS MDD810-12N2

Repetitive peak reverse voltage VRRM / VRSM 1200 V
Average on-state current IFAV 807 A
Maximum RMS on-state current IFRMS 1661 A
Surge current IFSM 17300 A
Forward voltage VF 1.24 V
Critical rate of rise of on-state current diT/dt –
Critical rate of rise of off-state voltage dvD/dt –
Thermal resistance junction–case RthJC 0.031 K/W
Package: Dual Diode Module

Title: MDD810-12N2 | Diode 1200V 807A Dual Module – FOIND
Meta description: MDD810-12N2 dual diode module 1200V 807A. FOIND solutions for controlled rectifiers, DC drives, soft starters, and high-power industrial systems.