IGBT Infineon DF900R12IP4DV

IGBT Module Infineon DF900R12IP4DV
Product code: DF900R12IP4DV

Category: PrimePACK™2 IGBT Module – Chopper / High Power
Collector-Emitter Voltage (VCES): 1200 V
Nominal Current (IC nom): 900 A
Repetitive Peak Collector Current (ICRM): 1800 A
Gate-Emitter Voltage (VGES): ±20 V
Collector-Emitter Saturation Voltage (VCE(sat)): ~1.7 V typ @ 25 °C
Total Power Dissipation (Ptot): 5.10 kW
Junction Operating Temperature (Tvj,op): 150 °C
Package / Outline: PrimePACK™2 module with Trench/Fieldstop IGBT4 and Enlarged Emitter Controlled 4 Diode

DF900R12IP4DV is a 1200 V, 900 A high-power chopper IGBT module designed for heavy industrial and traction applications.