Thyristor IXYS R0830LC12E

Thyristor IXYS R0830LC12E

Repetitive peak off-state voltage VDRM / VRRM 1200 V
Average on-state current ITAV 830 A
Maximum RMS on-state current ITRMS 1713 A
Surge current ITSM 8500 A
On-state voltage VT 2.4 V
Critical rate of rise of on-state current diT/dt 1500 A/µs
Critical rate of rise of off-state voltage dvD/dt 200 V/µs
Thermal resistance junction–case RthJK 0.064 K/W
Package: Distributed Gate Thyristor LC W10

Title: R0830LC12E | Thyristor 1200V 830A Distributed Gate – FOIND
Meta description: R0830LC12E distributed gate thyristor 1200V 830A. FOIND solutions for controlled rectifiers, DC drives, soft starters, and high-power industrial systems.