Thyristor Diode IXYS MDC600-20io1W

Module Thyristor/Diode IXYS MDC600-20io1W

Repetitive peak off-state voltage (VRRM / VDRM) 2000 V
Non-repetitive peak off-state voltage (VRSM / VDSM) 2100 V / 2000 V
Average on-state current (ITAV / IFAV) 710 A (Twater = 17°C, 4l/min)
RMS forward current (ITRMS / IFRMS) 1116 A
Surge current (ITSM / IFSM) 16.5 kA / 18.2 kA
Critical rate of rise of voltage (dv/dt)₍cr₎ 1000 V/µs
Critical rate of rise of current (di/dt)₍cr₎ 150 A/µs (repetitive), 300 A/µs (non-repetitive)
Thermal resistance junction–case (RthJC) 0.09 K/W (single thyristor/diode)
Thermal resistance case–heatsink (RthCH) –
Max case temperature (TC) 125 °C
Max virtual junction temperature (TVJ) 125 °C
Isolation voltage (VISOL) 3500 V

Title: MDC600-20io1W | Thyristor Diode Module 2000V 710A – FOIND Meta description: MDC600-20io1W IXYS thyristor/diode module 2000V 710A. FOIND solutions for high-power AC/DC conversion, industrial motor control, and line rectification.