Thyristor Diode IXYS MCD501-18io2

Module Thyristor/Diode IXYS MCD501-18io2

Repetitive peak off-state voltage (VRRM / VDRM) 1800 V
Non-repetitive peak off-state voltage (VRSM / VDSM) 1900 V
Average on-state current (ITAV / IFAV) 503 A (TC = 85°C)
RMS forward current (ITRMS / IFRMS) 1195 A
Surge current (ITSM / IFSM) 14.5 kA
Critical rate of rise of voltage (dv/dtcr) 1000 V/µs
Critical rate of rise of current (di/dtcr) 200 A/µs (repetitive), 400 A/µs (non-repetitive)
Thermal resistance junction–case (RthJC) 0.062 K/W (single thyristor), 0.031 K/W (whole module)
Thermal resistance case–heatsink (RthCH) 0.02 K/W (single thyristor), 0.01 K/W (whole module)
Max case temperature (TC) 125 °C
Max virtual junction temperature (TVJ) 125 °C
Isolation voltage (VISOL) 3000 V

Title: MCD501-18io2 | Thyristor Diode Module 1800V 503A – FOIND
Meta description: MCD501-18io2 IXYS thyristor/diode module 1800V 503A. FOIND solutions for industrial rectifiers, AC motor control, and high-power conversion systems.