Thyristor/Diode IXYS MCD250-12IO1

Module Thyristor/Diode IXYS MCD250-12IO1

Repetitive peak off-state voltage (VRRM / VDRM) 1200 V
Non-repetitive peak off-state voltage (VRSM / VDSM) 1300 V
Average on-state current (ITAV / IFAV) 287 A
RMS forward current (ITRMS / IFRMS) 450 A
Surge current (ITSM / IFSM) 9000 A
Critical rate of rise of voltage (dvdtcr) 1000 V/µs
Critical rate of rise of current (didtcr) 100 A/µs (repetitive) / 800 A/µs (non-repetitive)
Threshold voltage (VT0 / VF0) 0.85 V
Slope resistance (rT / rF) 0.82 mΩ
Thermal resistance junction–case (RthJC) 0.0645 K/W
Max case temperature (TC) 85 °C
Max virtual junction temperature (TVJ) 140 °C

Title: MCD250-12IO1 | Thyristor Diode Module 1200V 287A – FOIND
Meta description: MCD250-12IO1 IXYS thyristor/diode module 1200V 287A. FOIND solutions for industrial rectifiers and power conversion systems.