Thyristor Diode IXYS MCD225-12io1

Thyristor/Diode Module IXYS MCD225-12io1

Repetitive peak off-state voltage (VRRM / VDRM): 1200 V
Non-repetitive peak off-state voltage (VRSM / VDSM): 1300 V
Average on-state current (ITAV / IFAV): 220 A
RMS forward current (ITRMS / IFRMS): 224–320 A
Surge current (ITSM / IFSM): 6,80–8,64 kA
Critical rate of rise of voltage (dv/dtcr): 500 V/µs
Critical rate of rise of current (di/dtcr): 100 A/µs (repetitive), 500 A/µs (non-repetitive)
Thermal resistance junction–case (RthJC): 0,157 K/W
Thermal resistance case–heatsink (RthCH): 0,04 K/W
Max case temperature (TC): 140 °C
Max virtual junction temperature (TVJ): 140 °C
Gate trigger voltage (VGT): 6 V
Gate trigger current (IGT): 150–220 mA
Isolation voltage (VISOL): 4800 V
Applications: Motor control, softstarter, power converters, heat and temperature control for industrial furnaces and chemical processes, lighting control, solid state switches

Title: MCD225-12io1 | Thyristor/Diode Module IXYS Meta description: MCD225-12io1 IXYS Thyristor/Diode module 1200 V 220 A. Designed for motor control, softstarters, power converters, industrial heating and temperature control, lighting control and solid-state switching