Thyristor Diode IXYS MCD160-36IO3

Module Thyristor Diode IXYS MCD160-36IO3

Repetitive peak off-state voltage (VRRM / VDRM) 3600 V
Non-repetitive peak off-state voltage (VRSM / VDSM) 3700 V
Average on-state current (ITAV / IFAV) 170 A (TC = 85 °C)
RMS forward current (ITRMS / IFRMS) 385 A (TC = 55 °C)
DC on-state current (ITDC / IFDC) 325 A
Surge current (ITSM / IFSM) 3.65 kA (10 ms, 50 Hz, VRM = 60% VRRM)
Surge current low voltage (ITSM2) 4.00 kA (10 ms, VRM ≤ 10 V)
Critical rate of rise of voltage (dvdtcr) 1000 V/µs
Critical rate of rise of current (didtcr) 100 A/µs / 200 A/µs
Threshold voltage (VT0 / VF0) 1.20 V
Slope resistance (rT / rF) 2.30 mΩ
Thermal resistance junction–case (RthJC) 0.055 K/W
Thermal resistance case–heatsink (RthCH) 0.020 K/W
Isolation voltage (VISOL) 3000 V AC
Max case temperature (TC) 85 °C
Max virtual junction temperature (TVJ) 125 °C

Title: MCD160-36IO3 | Thyristor Diode Module 3600V 170A – FOIND
Meta description: MCD160-36IO3 IXYS thyristor/diode module 3600V 170A in isolated package. FOIND solutions for high-voltage industrial rectifiers and HVDC power systems.