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IGBT Semikron SKM200GB12F4
SKM200GB12F4 – SEMITRANS 3 IGBT Module | Product code SKM200GB12F4
Collector–emitter voltage (VCES) 1200 V
Nominal collector current IC (@ Tc = 80 °C) 200 A
Maximum collector current (IC max) ≈ 239 A (@ Tc = 80 °C) / ≈ 312 A (@ Tc = 25 °C)
Typical VCE(sat) ~2.06 V (IGBT4 High Speed, CAL4)
Maximum junction temperature (Tj max) 175 °C
Baseplate insulation Yes (DBC)
Package / Case SEMITRANS 3 (Half‑Bridge), tecnologia IGBT4 ad alta velocità
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Foind S.r.l.
We are betting today on the challenges of tomorrow by constantly trying to keep up with technological advancements.
Contacts
Site
Corso Europa, 74023
Grottaglie (TA) Italia
© 2025 All Right reserved. Created by Guido Turano
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