IGBT Infineon FF400R12KT4P

Module IGBT Infineon FF400R12KT4P

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 400 A
Repetitive peak collector current (ICRM) 800 A
Collector-emitter saturation voltage (VCEsat) 1.90 V (typ., Tvj = 125 °C)
Turn-on energy (Eon) 26.5 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 35.5 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–heatsink (RthJH) 0.0859 K/W
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4000 V AC
Integrated freewheeling diode 1200 V / 400 A
Thermal interface material Pre-applied
Package: 62 mm C-Series IGBT module, insulated copper baseplate

Title: FF400R12KT4P | IGBT Module 1200V 400A 62mm C-Series – FOIND
Meta description: FF400R12KT4P Infineon IGBT module 1200V 400A 62mm C-Series with pre-applied thermal interface material and integrated diode. FOIND solutions for high power converters, motor drives, UPS systems and wind turbines.