IGBT Infineon FF400R12KE3_B2

Module IGBT Infineon FF400R12KE3_B2

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 400 A
Repetitive peak collector current (ICRM) 800 A
Collector-emitter saturation voltage (VCEsat) 2.00 V (typ., Tvj = 125 °C)
Turn-on energy (Eon) 25.0 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 62.0 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–case (RthJC) 0.062 K/W
Thermal resistance case–heatsink (RthCH) 0.031 K/W
Max operating junction temperature (Tvj) 125 °C
Isolation voltage (VISOL) 2500 V AC
Integrated freewheeling diode 1200 V / 400 A
Package: 62 mm C-Series IGBT module, insulated copper baseplate

Title: FF400R12KE3_B2 | IGBT Module 1200V 400A 62mm C-Series – FOIND
Meta description: FF400R12KE3_B2 Infineon IGBT module 1200V 400A 62mm C-Series with integrated diode. FOIND solutions for industrial inverters, motor drives and power conversion systems.