IGBT Infineon DF120R12W2H3_B27

IGBT Module Infineon DF120R12W2H3_B27
Product code: DF120R12W2H3_B27

Category: IGBT Module – Solar Applications
Voltage (VCES): 1200 V
Nominal Current (IC nom): 40 A
Repetitive Peak Collector Current (ICRM): 80 A
Gate-Emitter Voltage (VGES): ±20 V
Junction Operating Temperature (Tvj,op): 150 °C
Collector-Emitter Saturation Voltage (VCE(sat)): Low switching losses, High Speed IGBT H3 technology
Package / Outline: Compact IGBT module with PressFIT / NTC

DF120R12W2H3_B27 is a 1200 V, 40 A high-speed IGBT module designed for solar and industrial power applications.