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Foind S.r.l.
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IGBT Module Eupec BSM75GB170DN2
IGBT Module Eupec BSM75GB170DN2
Product code: BSM75GB170DN2
Category: IGBT Power Module – Half-Bridge
Voltage (VCES): 1700 V
Nominal Current (IC): 75 A (110 A @ TC = 80 °C)
VCE(sat): 4.6 V (typ. @ 25 °C)
Configuration: Half-Bridge IGBT with Integrated Fast Free-Wheeling Diodes
Technology: IGBT
Thermal Resistance (RthJC): ≤ 0.20 K/W
Package / Outline: Insulated Metal Base Plate (GB Package)
Recommended Gate Resistance: RG(on), min. = 22 Ω
BSM75GB170DN2 IGBT Module 1700 V 75 A Half-Bridge | Eupec. The BSM75GB170DN2 is a EUPEC half-bridge IGBT power module designed for high-voltage and high-power industrial applications. Rated at 1700 V and 75 A nominal collector current, the module integrates two IGBT switches in half-bridge configuration, each equipped with fast free-wheeling diodes to ensure efficient commutation and reduced switching losses.
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Foind S.r.l.
We are betting today on the challenges of tomorrow by constantly trying to keep up with technological advancements.
Contacts
Site
Corso Europa, 74023
Grottaglie (TA) Italia
© 2025 All Right reserved. Created by Guido Turano
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