IGBT Infineon IFF600B12ME4_B11

Module IGBT Infineon IFF600B12ME4_B11

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 600 A
Repetitive peak collector current (ICRM) 1200 A
Collector-emitter saturation voltage (VCEsat) 1.75 V (typ., Tvj = 25 °C)
Turn-on energy (Eon) 35.5 mJ (typ., Tvj = 25 °C)
Turn-off energy (Eoff) 50.5 mJ (typ., Tvj = 25 °C)
Thermal resistance junction–case (RthJC) 0.0473 K/W (per IGBT)
Thermal resistance case–heatsink (RthCH) 0.0302 K/W (per IGBT)
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 2500 V AC
Integrated freewheeling diode 1200 V / 600 A
Integrated current sensor Shunt 0.26 mΩ
Integrated temperature sensor NTC
Technology IGBT4 – E4
Package: EconoDUAL™ 3 IGBT module, half-bridge, PressFIT contacts, copper baseplate

Title:
IFF600B12ME4_B11 | IGBT Module 1200V 600A EconoDUAL™3 – Infineon IGBT4-E4 half-bridge module with PressFIT technology, integrated current shunt and NTC, suitable for high-power converters, motor drives, UPS and wind turbine applications.