IGBT Infineon IFF300B17N2E4P_B11

Module IGBT Infineon IFF300B17N2E4P_B11

Collector-emitter voltage (VCES) 1700 V
Nominal collector current (ICnom) 300 A
DC collector current (IC) 400 A
Repetitive peak collector current (ICRM) 600 A
Collector-emitter saturation voltage (VCEsat) 2.35 V (typ., Tvj = 125 °C)
Turn-on energy (Eon) 98 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 86.5 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–case (RthJC) 0.10 K/W
Thermal resistance case–heatsink (RthCH) 0.075 K/W
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 3400 V AC
Integrated freewheeling diode 1700 V / 200 A
Package: MIPAQ™ base IGBT module, insulated copper baseplate, pre-applied thermal interface material, PressFIT contacts, integrated NTC

Title: IFF300B17N2E4P_B11 | IGBT Module 1700V 300A MIPAQ – FOIND
Meta description: IFF300B17N2E4P_B11 Infineon IGBT module 1700V 300A MIPAQ with integrated diode, PressFIT and pre-applied TIM. FOIND solutions for motor drives, UPS and industrial power converters.