IGBT Infineon FZ900R12KP4

Module IGBT Infineon FZ900R12KP4

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 900 A
Repetitive peak collector current (ICRM) 1800 A
Collector-emitter saturation voltage (VCEsat) 1.70 – 2.00 – 2.10 V
Turn-on energy (Eon) 150 – 200 – 240 mJ
Turn-off energy (Eoff) 180 – 230 – 270 mJ
Thermal resistance junction–case (RthJC) 0.065 K/W per IGBT
Thermal resistance case–heatsink (RthCH) 0.018 K/W per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4 kV AC 1 min
Titolo: Module IGBT Infineon FZ900R12KP4
Meta description: FZ900R12KP4 Infineon IGBT module 1200 V 900 A single switch with Trench/Fieldstop IGBT4 and emitter controlled diode technology for high-power converters, motor drives, UPS systems, and wind turbines.