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IGBT Infineon FZ825R33HE4D
IGBT Module Infineon FZ825R33HE4D
Product code: FZ825R33HE4D
Category: HiPak™ IGBT Module – High Power Inverters
Voltage (VCES): 3300 V
Nominal Current (IC nom): 825 A
Repetitive Peak Collector Current (ICRM): 1650 A
Gate-Emitter Voltage (VGES): ±20 V
Junction Operating Temperature (Tvj,op): 150 °C
Collector-Emitter Saturation Voltage (VCE(sat)): Low VCE(sat), Trench/Field-stop IGBT4 technology
Package / Outline: HiPak™ module with isolated baseplate
FZ825R33HE4D is a 3300 V, 825 A HiPak™ IGBT module intended for very high-power inverter applications
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Foind S.r.l.
We are betting today on the challenges of tomorrow by constantly trying to keep up with technological advancements.
Contacts
Site
Corso Europa, 74023
Grottaglie (TA) Italia
© 2025 All Right reserved. Created by Guido Turano
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