IGBT Infineon FZ800R45KL3_B5

Module IGBT Infineon FZ800R45KL3_B5

Collector-emitter voltage (VCES) 4500 V
Nominal collector current (ICnom) 800 A
Repetitive peak collector current (ICRM) 1600 A
Collector-emitter saturation voltage (VCEsat) 2.50 V (typ., Tvj = 25 °C)
Turn-on energy (Eon) ~6000 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) ~9000 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–heatsink (RthJH) —
Max operating junction temperature (Tvj) 125 °C
Isolation voltage (VISOL) 10400 V AC
Title: FZ800R45KL3_B5 | IGBT Module 4500V 800A – Infineon
Meta description: FZ800R45KL3_B5 Infineon IGBT module 4500V 800A with Trench/Fieldstop IGBT3 and emitter‑controlled diode, offering high insulation (10.4 kV AC) and low VCEsat for traction and high‑power converters.