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foind@foind.it

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IGBT Infineon FZ800R33KF2C

IGBT Module Infineon FZ800R33KF2C
Product code: FZ800R33KF2C

Category: IGBT Module – Single
Voltage (VCES): 3300 V
Nominal Current (IC): 800 A
Gate-Emitter Voltage (VGES): ±20 V
Collector-Emitter Leakage Current (ICES): ≤ 5 mA
Gate-Emitter Leakage Current (IGES): ≤ 0.4 µA
Gate Threshold Voltage (VGE(th)): 6 V
Package / Outline: Power Module
Configuration: Single IGBT
Technology: High Voltage IGBT

FZ800R33KF2C is a 3300 V 800 A single IGBT power module.
It is intended for high-power applications requiring high voltage capability and high current handling, within the specified electrical and mechanical characteristics.

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Foind S.r.l.

We are betting today on the challenges of tomorrow by constantly trying to keep up with technological advancements.

Contacts

+39 099 561 1930

+39 340 6002418 

foind@foind.it

foind@pec.it

Site

Corso Europa, 74023

Grottaglie (TA) Italia

© 2025 All Right reserved. Created by Guido Turano

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