IGBT Infineon FZ750R65KE3

Module IGBT Infineon FZ750R65KE3

Collector-emitter voltage (VCES) 6500 V
Nominal collector current (ICnom) 750 A
Repetitive peak collector current (ICRM) 1500 A
Collector-emitter saturation voltage (VCEsat) 3.40 V (typ., Tvj = 25 °C)
Turn-on energy (Eon) 6500 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 4200 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–heatsink (RthJH) 8.70 K/kW
Max operating junction temperature (Tvj) 125 °C
Isolation voltage (VISOL) 10400 V AC
Title: FZ750R65KE3 | IGBT Module 6500V 750A – Infineon
Meta description: FZ750R65KE3 Infineon IGBT module 6500V 750A with Trench/Fieldstop IGBT3 and emitter‑controlled diode, delivering high insulation (10.4 kV AC) and robust switching characteristics for traction and industrial converters.