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IGBT Infineon FZ500R65KE3
Module IGBT Infineon FZ500R65KE3
Collector-emitter voltage (VCES) 6500 V
Nominal collector current (ICnom) 500 A
Repetitive peak collector current (ICRM) 1000 A
Collector-emitter saturation voltage (VCEsat) 3.0 V (typ., Tvj = 25 °C)
Turn-on energy (Eon) 2800 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 4300 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–heatsink (RthJH) 13.2 K/kW
Max operating junction temperature (Tvj) 125 °C
Isolation voltage (VISOL) 10400 V AC
Title: FZ500R65KE3 | IGBT Module 6500V 500A – Infineon
Meta description: FZ500R65KE3 Infineon IGBT module 6500V 500A IGBT3‑E3 with high insulation (10.4 kV AC), low VCEsat and robust AlSiC base plate, ideal for traction drives and medium-voltage power converters.
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Foind S.r.l.
We are betting today on the challenges of tomorrow by constantly trying to keep up with technological advancements.
Contacts
Site
Corso Europa, 74023
Grottaglie (TA) Italia
© 2025 All Right reserved. Created by Guido Turano
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