IGBT Infineon FZ400R12KS4P

Module IGBT Infineon FZ400R12KS4P

Collector‑emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 400 A
Repetitive peak collector current (ICRM) 800 A
Collector‑emitter saturation voltage (VCEsat) 2.05 – 2.20 – 2.35 V
Turn‑on energy (Eon) 25 – 35 – 40 mJ
Turn‑off energy (Eoff) 30 – 45 – 50 mJ
Thermal resistance junction–case (RthJC) 0.065 K/W per IGBT
Thermal resistance case–heatsink (RthCH) 0.016 K/W per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4 kV AC 1 min
Titolo: Module IGBT Infineon FZ400R12KS4P
Meta description: FZ400R12KS4P Infineon IGBT module 1200 V 400 A with KS4 Trench/Fieldstop IGBT and emitter controlled diode technology for motor drives, UPS systems, and high-power converters.