IGBT Infineon FZ400R12KE4

Module IGBT Infineon FZ400R12KE4

Collector‑emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 400 A
Repetitive peak collector current (ICRM) 800 A
Collector‑emitter saturation voltage (VCEsat) 2.00 V (typ., Tvj = 25 °C)
Turn‑on energy (Eon) 22 – 33 – 36 mJ (Min‑Typ‑Max @ Tvj = 25 / 125 / 150 °C, LS = 60 nH, di/dt = 5000 A/µs)
Turn‑off energy (Eoff) 33 – 50 – 55 mJ (Min‑Typ‑Max @ Tvj = 25 / 125 / 150 °C, LS = 60 nH, du/dt = 3500 V/µs)
Thermal resistance junction–case (RthJC) 0,062 K/W per IGBT
Thermal resistance case–heatsink (RthCH) 0,016 K/W per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4 kV AC 1 min
Title: FZ400R12KE4 | IGBT Module 1200 V 400 A Trench/Fieldstop IGBT4 (KE4)
Meta description: FZ400R12KE4 Infineon IGBT module 1200 V 400 A single switch with Trench/Fieldstop IGBT4 and emitter controlled diode technology for motor drives, UPS systems, wind turbines and high‑power converters.