IGBT Infineon FZ250R65KE3

Module IGBT Infineon FZ250R65KE3

Collector-emitter voltage (VCES) 6500 V
Nominal collector current (ICnom) 250 A
Repetitive peak collector current (ICRM) 500 A
Collector-emitter saturation voltage (VCEsat) 3.00 V (typ., Tvj = 25 °C) / 3.70 V (typ., Tvj = 125 °C)
Turn-on energy (Eon) 7.30 mJ (typ., IC = 250 A, VCE = 3600 V, Lσ = 280 nH, VGE = ±15 V, RGon = 3 Ω, Tvj = 25 °C)
Turn-off energy (Eoff) 7.60 mJ (typ., IC = 250 A, VCE = 3600 V, Lσ = 280 nH, VGE = ±15 V, RGoff = 20 Ω, Tvj = 25 °C)
Thermal resistance junction–heatsink (RthJH) 26.1 K/kW per IGBT
Max operating junction temperature (Tvj) 125 °C (op under switching conditions)
Isolation voltage (VISOL) 10.4 kV AC 60 s
Title: FZ250R65KE3 | IGBT Module 6500 V 250 A Trench / Fieldstop IGBT3
Meta description: FZ250R65KE3 Infineon IGBT module 6500 V 250 A with Trench / Fieldstop IGBT3 and emitter-controlled diode, for medium-voltage power applications.