IGBT Infineon FZ2400R17HE4_B9

Module IGBT Infineon FZ2400R17HE4_B9

Collector‑emitter voltage (VCES) 1700 V
Nominal collector current (ICnom) 2400 A
Repetitive peak collector current (ICRM) 4800 A
Collector‑emitter saturation voltage (VCEsat) 2.05 – 2.20 – 2.40 V
Turn‑on energy (Eon) 365 – 460 – 505 mJ
Turn‑off energy (Eoff) 430 – 455 – 480 mJ
Thermal resistance junction–case (RthJC) 14.0 K/kW per IGBT
Thermal resistance case–heatsink (RthCH) –
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 2.5 kV AC 1 min
Titolo: Module IGBT Infineon FZ2400R17HE4_B9
Meta description: FZ2400R17HE4_B9 Infineon IGBT module 1700 V 2400 A IHM‑B with HE4 Trench/Fieldstop IGBT and emitter controlled diode technology for high-power converters, motor drives, UPS systems, and wind turbines.