IGBT Infineon FZ1800R17KE3_B2

Module IGBT Infineon FZ1800R17KE3_B2

Collector‑emitter voltage (VCES) 1700 V
Nominal collector current (ICnom) 1800 A
Repetitive peak collector current (ICRM) 3600 A
Collector‑emitter saturation voltage (VCEsat) 2.20 – 2.40 – 2.50 V
Turn‑on energy (Eon) 400 – 520 – 580 mJ
Turn‑off energy (Eoff) 480 – 550 – 620 mJ
Thermal resistance junction–case (RthJC) 13.5 K/kW per IGBT
Thermal resistance case–heatsink (RthCH) 2.0 K/kW per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4 kV AC 1 min
Titolo: Module IGBT Infineon FZ1800R17KE3_B2
Meta description: FZ1800R17KE3_B2 Infineon IGBT module 1700 V 1800 A single switch with Trench/Fieldstop IGBT4 and emitter controlled diode technology for high-power converters, motor drives, and industrial applications.