IGBT Infineon FZ1800R17HP4_B9

Module IGBT Infineon FZ1800R17HP4_B9

Collector‑emitter voltage (VCES) 1700 V
Nominal collector current (ICnom) 1800 A
Repetitive peak collector current (ICRM) 3600 A
Collector‑emitter saturation voltage (VCEsat) 2.20 – 2.40 – 2.60 V
Turn‑on energy (Eon) 220 – 280 – 320 mJ
Turn‑off energy (Eoff) 250 – 320 – 360 mJ
Thermal resistance junction–case (RthJC) 0.015 K/W per IGBT
Thermal resistance case–heatsink (RthCH) 0.010 K/W per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4 kV AC 1 min
Titolo: Module IGBT Infineon FZ1800R17HP4_B9
Meta description: FZ1800R17HP4_B9 Infineon IGBT module 1700 V 1800 A with HP4 Trench/Fieldstop IGBT and emitter controlled diode technology for motor drives, UPS systems, and high-power converters.