IGBT Infineon FZ1600R12HP4

Module IGBT Infineon FZ1600R12HP4

Collector‑emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 1600 A
Repetitive peak collector current (ICRM) 3200 A
Collector‑emitter saturation voltage (VCEsat) 2.00 – 2.20 – 2.35 V
Turn‑on energy (Eon) 450 – 600 – 650 mJ
Turn‑off energy (Eoff) 500 – 700 – 750 mJ
Thermal resistance junction–case (RthJC) 6.50 K/kW per IGBT
Thermal resistance case–heatsink (RthCH) 7.5 K/kW per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4 kV AC 1 min
Titolo: Module IGBT Infineon FZ1600R12HP4
Meta description: FZ1600R12HP4 Infineon IGBT module 1200 V 1600 A IHM‑B with HP4 Trench/Fieldstop IGBT and emitter controlled diode technology for motor drives, UPS systems, medium-voltage converters, and wind turbines.