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IGBT Infineon FZ1500R33HE3
Module IGBT Infineon FZ1500R33HE3
Collector-emitter voltage (VCES) 3300 V
Nominal collector current (ICnom) 1500 A
Repetitive peak collector current (ICRM) 3000 A
Collector-emitter saturation voltage (VCEsat) 3.00 V (typ., Tvj = 125 °C)
Turn-on energy (Eon) 2900 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 2300 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–heatsink (RthJH) 17.35 K/kW
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 6000 V AC
Title: FZ1500R33HE3 | IGBT Module 3300V 1500A – Infineon
Meta description: FZ1500R33HE3 Infineon IGBT module 3300V 1500A featuring Trench/Fieldstop IGBT3 and emitter‑controlled diodes, optimized for high‑power converters and traction applications.
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Foind S.r.l.
We are betting today on the challenges of tomorrow by constantly trying to keep up with technological advancements.
Contacts
Site
Corso Europa, 74023
Grottaglie (TA) Italia
© 2025 All Right reserved. Created by Guido Turano
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