IGBT Infineon FZ1200R45HL3

Module IGBT Infineon FZ1200R45HL3

Collector-emitter voltage (VCES) 4500 V
Nominal collector current (ICnom) 1200 A
Repetitive peak collector current (ICRM) 2400 A
Collector-emitter saturation voltage (VCEsat) 2.35 – 2.90 – 3.00 V
Turn-on energy (Eon) 4000 – 5300 – 6000 mJ
Turn-off energy (Eoff) 4100 – 5300 – 5700 mJ
Thermal resistance junction–case (RthJC) 8.20 K/kW per IGBT
Thermal resistance case–heatsink (RthCH) 10.0 K/kW per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 6 kV AC 1 min
Titolo: Module IGBT Infineon FZ1200R45HL3
Meta description: FZ1200R45HL3 Infineon IGBT module 4500 V 1200 A single switch with Trench/Fieldstop IGBT3 and emitter controlled 3 diode technology for high-power converters, medium-voltage motor drives, UPS systems, and power transmission.