IGBT Infineon FZ1200R17HE4P

Module IGBT Infineon FZ1200R17HE4P

Collector‑emitter voltage (VCES) 1700 V
Nominal collector current (ICnom) 1200 A
Repetitive peak collector current (ICRM) 2400 A
Collector‑emitter saturation voltage (VCEsat) 3.00 – 3.20 – 3.40 V
Turn‑on energy (Eon) 1400 – 1950 – 2200 mJ
Turn‑off energy (Eoff) 1350 – 1800 – 1950 mJ
Thermal resistance junction–case (RthJC) 9.55 K/kW per IGBT
Thermal resistance case–heatsink (RthCH) 10.0 K/kW per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 6 kV AC 1 min
Titolo: Module IGBT Infineon FZ1200R17HE4P
Meta description: FZ1200R17HE4P Infineon IGBT module 1700 V 1200 A IHM‑B with HE4 Trench/Fieldstop IGBT and emitter controlled diode technology for chopper applications, medium-voltage converters, motor drives, UPS systems, and wind turbines.