IGBT Infineon FZ1200R17HE4

Module IGBT Infineon FZ1200R17HE4

Collector‑emitter voltage (VCES) 1700 V
Nominal collector current (ICnom) 1200 A
Repetitive peak collector current (ICRM) 2400 A
Collector‑emitter saturation voltage (VCEsat) 2.80 V (typ., Tvj = 25 °C)
Turn‑on energy (Eon) 1350 – 1800 – 1950 mJ
Turn‑off energy (Eoff) 1300 – 1700 – 1900 mJ
Thermal resistance junction–case (RthJC) ≈ 7 K/kW per IGBT
Thermal resistance case–heatsink (RthCH) ≈ 10 K/kW per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 6 kV AC 1 min
Title: FZ1200R17HE4 | IGBT Module 1700 V 1200 A IHM‑B (HE4)
Meta description: FZ1200R17HE4 Infineon IGBT module 1700 V 1200 A with Trench/Fieldstop IGBT3 and emitter controlled diode, designed for medium-voltage converters, motor drives, UPS systems, and industrial applications.