IGBT Infineon FZ1200R12HP4

Module IGBT Infineon FZ1200R12HP4

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 1200 A
Repetitive peak collector current (ICRM) 2400 A
Collector-emitter saturation voltage (VCEsat) 2.05 V (typ., Tvj = 150 °C)
Turn-on energy (Eon) 175 mJ (typ., Tvj = 150 °C)
Turn-off energy (Eoff) 270 mJ (typ., Tvj = 150 °C)
Thermal resistance junction–heatsink (RthJH) 13.5 K/kW per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4000 V AC
Title: FZ1200R12HP4 | IGBT Module 1200V 1200A – Infineon
Meta description: FZ1200R12HP4 Infineon IGBT module 1200V 1200A IGBT4‑E4 with soft-switching Trench technology. Ideal for high-power converters, motor drives, and wind turbine applications.