IGBT Infineon FZ1000R33HL3

Module IGBT Infineon FZ1000R33HL3

Collector-emitter voltage (VCES) 3300 V
Nominal collector current (ICnom) 1000 A
Repetitive peak collector current (ICRM) 2000 A
Collector-emitter saturation voltage (VCEsat) 2.35 – 2.85 – 3.00 V
Turn-on energy (Eon) 2500 – 3200 – 3800 mJ
Turn-off energy (Eoff) 2600 – 3400 – 4000 mJ
Thermal resistance junction–case (RthJC) 9.50 K/kW per IGBT
Thermal resistance case–heatsink (RthCH) 11.0 K/kW per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 6 kV AC 1 min
Titolo: Module IGBT Infineon FZ1000R33HL3
Meta description: FZ1000R33HL3 Infineon IGBT module 3300 V 1000 A single switch with HL3 Trench/Fieldstop IGBT and emitter controlled diode technology for high-power converters, medium-voltage motor drives, UPS systems, and power transmission.