IGBT Infineon FZ1000R33HE3

Module IGBT Infineon FZ1000R33HE3

Collector‑emitter voltage (VCES) 3300 V
Nominal collector current (ICnom) 1000 A
Repetitive peak collector current (ICRM) 2000 A
Collector‑emitter saturation voltage (VCEsat) 2.70 – 3.20 – 3.30 V
Turn‑on energy (Eon) 1400 – 1950 – 2200 mJ
Turn‑off energy (Eoff) 1350 – 1800 – 1950 mJ
Thermal resistance junction–case (RthJC) 9.55 K/kW per IGBT
Thermal resistance case–heatsink (RthCH) 10.0 K/kW per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 6 kV AC 1 min
Titolo: Module IGBT Infineon FZ1000R33HE3
Meta description: FZ1000R33HE3 Infineon IGBT module 3300 V 1000 A single switch with fast Trench/Fieldstop IGBT3 and emitter controlled diode technology for medium-voltage converters, motor drives, UPS systems, and industrial applications.