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Foind S.r.l.

We are betting today on the challenges of tomorrow by constantly trying to keep up with technological advancements.

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+39 099 561 1930

+39 340 6002418 

foind@foind.it

foind@pec.it

Site

Corso Europa, 74023

Grottaglie (TA) Italia

© 2025 All Right reserved. Created by Guido Turano

IGBT Infineon FS75R12KT4_B15

IGBT Module – FS75R12KT4_B15
Product code: FS75R12KT4_B15

Parameter Value
Category IGBT Power Module
Voltage (VCES) 1200 V
Nominal Current (IC nom) 75 A
Maximum DC Collector Current (IC) 75 A (TC = 95 °C, Tvj max = 175 °C)
Peak Collector Current (ICRM) 150 A (tp = 1 ms)
Technology Trench / Fieldstop IGBT4 + Emitter Controlled Diode
Configuration Inverter (IGBT + Freewheeling Diode)
Gate–Emitter Voltage (VGES) ±20 V
VCE(sat) (typ.) 1.85 V @ 25 °C / 2.15 V @ 125 °C / 2.25 V @ 150 °C

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Foind S.r.l.

We are betting today on the challenges of tomorrow by constantly trying to keep up with technological advancements.

Contacts

+39 099 561 1930

+39 340 6002418 

foind@foind.it

foind@pec.it

Site

Corso Europa, 74023

Grottaglie (TA) Italia

© 2025 All Right reserved. Created by Guido Turano

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