IGBT Infineon FS150R07N3E4

IGBT Module Infineon FS150R07N3E4

Collector-emitter voltage (VCES) 650 V
Nominal collector current (ICnom) 150 A
Repetitive peak collector current (ICRM) 300 A
Collector-emitter saturation voltage (VCEsat) 1,55–1,95 V (min–max, Tvj = 25–150 °C)
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 2500 V AC
Integrated freewheeling diode 650 V / 150 A
Diode thermal resistance junction–case (RthJC) 0,60 K/W per diode
Diode thermal resistance case–heatsink (RthCH) 0,15 K/W per diode
Package: EconoPACK™3 module with Trench/Fieldstop IGBT4, emitter controlled diode, integrated NTC

FS150R07N3E4 | IGBT Module 650V 150A – FOIND
FS150R07N3E4 Infineon IGBT module 650V 150A in EconoPACK™3 package with Trench/Fieldstop IGBT4.