IGBT Infineon FF900R12ME7W_B11

Module IGBT Infineon FF900R12ME7W_B11

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 900 A
Repetitive peak collector current (ICRM) 1800 A
Collector-emitter saturation voltage (VCEsat) 1.80 V (typ., Tvj = 25 °C)
Turn-on energy (Eon) 138 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 130 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–cooling fluid (RthJF) 0.0837 K/W (per IGBT)
Max operating junction temperature (Tvj) 175 °C
Isolation voltage (VISOL) 3400 V AC
Integrated freewheeling diode 1200 V / 900 A
Integrated temperature sensor NTC 5 kΩ @ 25 °C
Package: EconoDUAL™3 IGBT module, isolated copper baseplate, direct-cooled
Title: FF900R12ME7W_B11 | IGBT Module 1200V 900A EconoDUAL™3 – FOIND
Meta description: FF900R12ME7W_B11 Infineon IGBT module 1200V 900A in EconoDUAL™3 direct-cooled package with TRENCHSTOP™ IGBT7, integrated diode and NTC. FOIND solutions for high-power converters, motor drives, servo drives, UPS systems and commercial agricultural vehicles.