IGBT Infineon FF900R12ME7P_B11

Module IGBT Infineon FF900R12ME7P_B11

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 900 A
Repetitive peak collector current (ICRM) 1800 A
Collector-emitter saturation voltage (VCEsat) 1.80 V (typ., Tvj = 25 °C)
Turn-on energy (Eon) 138 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 130 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–heatsink (RthJH) 0.072 K/W (per IGBT, with pre-applied TIM)
Max operating junction temperature (Tvj) 175 °C
Isolation voltage (VISOL) 3400 V AC
Integrated freewheeling diode 1200 V / 900 A
Integrated temperature sensor NTC 5 kΩ @ 25 °C
Package: EconoDUAL™3 IGBT module, isolated copper baseplate, pre-applied thermal interface material
Title: FF900R12ME7P_B11 | IGBT Module 1200V 900A EconoDUAL™3 – FOIND
Meta description: FF900R12ME7P_B11 Infineon IGBT module 1200V 900A in EconoDUAL™3 package with TRENCHSTOP™ IGBT7, integrated diode and NTC, pre-applied TIM. FOIND solutions for UPS, motor drives, commercial agricultural vehicles and high-power converters.