IGBT Infineon FF900R12IP4P

Module IGBT Infineon FF900R12IP4P

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 900 A
Repetitive peak collector current (ICRM) 1800 A
Collector-emitter saturation voltage (VCEsat) 1,70–2,10 V (min–max, Tvj = 25–150 °C)
Turn-on energy (Eon) 71–105 mJ (min–max, Tvj = 25–150 °C)
Turn-off energy (Eoff) 125–175 mJ (min–max, Tvj = 25–150 °C)
Thermal resistance junction–heatsink (RthJH) 48,1 K/kW per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4000 V AC
Integrated freewheeling diode 1200 V / 900 A
Diode thermal resistance junction–heatsink (RthJH) 87,2 K/kW per diode
Package: PrimePACK™2 IGBT module with Trench/Fieldstop IGBT4, emitter controlled diode, integrated NTC
Title: FF900R12IP4P | IGBT Module 1200V 900A – FOIND
Meta description: FF900R12IP4P Infineon IGBT module 1200V 900A in PrimePACK™2 package with emitter controlled diode and NTC. FOIND solutions for high power converters, motor drives, and wind turbines.