IGBT Infineon FF900R12IP4DV

Module IGBT Infineon FF900R12IP4DV

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 900 A
Repetitive peak collector current (ICRM) 1800 A
Collector-emitter saturation voltage (VCEsat) 1.70 V (typ., Tvj = 25 °C)
Turn-on energy (Eon) 100 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 160 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–case (RthJC) 0.0295 K/W (per IGBT)
Thermal resistance case–heatsink (RthCH) 0.0045 K/W (per module)
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4000 V AC
Integrated freewheeling diode 1200 V / 900 A
Package: PrimePACK™ 2 IGBT module, insulated copper baseplate
Title: FF900R12IP4DV | IGBT Module 1200V 900A PrimePACK™ 2 – FOIND
Meta description: FF900R12IP4DV Infineon IGBT module 1200V 900A in PrimePACK™ 2 package with enlarged integrated diode and NTC. FOIND solutions for commercial agricultural vehicles and high power converter applications.