IGBT Infineon FF900R12IE4VP

Module IGBT Infineon FF900R12IE4VP

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 900 A
Repetitive peak collector current (ICRM) 1800 A
Collector-emitter saturation voltage (VCEsat) 1,75–2,05 V (typ./max, Tvj = 25–150 °C)
Turn-on energy (Eon) 55–80 mJ (typ./max, Tvj = 25–150 °C)
Turn-off energy (Eoff) 85–130 mJ (typ./max, Tvj = 25–150 °C)
Thermal resistance junction–case (RthJC) 29,5 K/kW per IGBT
Thermal resistance case–heatsink (RthCH) 14 K/kW per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4000 V AC
Integrated freewheeling diode 1200 V / 900 A
Package: PrimePACK™2 IGBT module with Trench/Fieldstop IGBT4 and emitter controlled diode with NTC
Title: FF900R12IE4VP | IGBT Module 1200V 900A – FOIND
Meta description: FF900R12IE4VP Infineon IGBT module 1200V 900A in PrimePACK™2 package with emitter controlled diode and NTC. FOIND solutions for motor drives, resonant inverters, traction drives, UPS and wind turbines.