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IGBT Infineon FF800R17KP4_B2
IGBT Power Module – FF800R17KP4_B2
Product code: FF800R17KP4_B2
Key Parameter Value
Category IGBT Power Module
Collector-Emitter Voltage (VCES) 1700 V
Nominal Collector Current (IC nom) 800 A
Maximum DC Collector Current (IC) 1200 A
Peak Collector Current (ICRM) 1600 A (tp = 1 ms)
Technology IGBT4 Trench / Fieldstop + Emitter Controlled Diode
Configuration Half-Bridge (IGBT + Freewheeling Diode)
Gate-Emitter Voltage (VGES) ±20 V
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Foind S.r.l.
We are betting today on the challenges of tomorrow by constantly trying to keep up with technological advancements.
Contacts
Site
Corso Europa, 74023
Grottaglie (TA) Italia
© 2025 All Right reserved. Created by Guido Turano
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