IGBT Infineon FF750R17ME7D_B11

IGBT Module Infineon FF750R17ME7D_B11
Product code: FF750R17ME7D_B11

Category: EconoDUAL™3 IGBT Module – Inverter / Medium-Voltage Applications
Voltage (VCES): 1700 V
Nominal Current (IC nom): 750 A
Repetitive Peak Collector Current (ICRM): 1500 A
Gate-Emitter Voltage (VGES): ±20 V
Junction Operating Temperature (Tvj,op): 150 °C
Collector-Emitter Saturation Voltage (VCE(sat)): Standard TRENCHSTOP™ IGBT7 characteristics
Package / Outline: EconoDUAL™3 module with PressFIT contacts, isolated copper baseplate, high creepage and clearance distances

FF750R17ME7D_B11 is a 1700 V, 750 A EconoDUAL™3 inverter module based on TRENCHSTOP™ IGBT7 technology with integrated emitter-controlled diode, NTC temperature sensor, high-current density, low VCE(sat), and optimized for high-power and medium-voltage applications.