IGBT Infineon FF650R17IE4DP_B2

Module IGBT Infineon FF650R17IE4DP_B2

Collector-emitter voltage (VCES) 1700 V
Nominal collector current (ICnom) 650 A
Repetitive peak collector current (ICRM) 1300 A
Collector-emitter saturation voltage (VCEsat) 2.45 V (typ., Tvj = 125 °C)
Turn-on energy (Eon) 260 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 205 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–heatsink (RthJH) 0.056 K/W
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4000 V AC
Integrated freewheeling diode 1700 V / 650 A
Integrated temperature sensor NTC
Thermal interface material Pre-applied
Package: PrimePACK™ 2 IGBT module, insulated copper baseplate

Title: FF650R17IE4DP_B2 | IGBT Module 1700V 650A PrimePACK 2 – FOIND
Meta description: FF650R17IE4DP_B2 Infineon IGBT module 1700V 650A PrimePACK 2 with integrated diode, NTC and pre-applied thermal interface material. FOIND solutions for traction drives, wind turbines and high power industrial converters.