IGBT Infineon FF600R12ME4P_B11

Module IGBT Infineon FF600R12ME4P_B11

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 600 A
Repetitive peak collector current (ICRM) 1200 A
Collector-emitter saturation voltage (VCEsat) 1.75 V (typ., Tvj = 25 °C)
Turn-on energy (Eon) 62.5 mJ (typ., Tvj = 25 °C)
Turn-off energy (Eoff) 47 mJ (typ., Tvj = 25 °C)
Thermal resistance junction–heat sink (RthJH) 0.065 K/W (per IGBT, with pre-applied TIM)
Max operating junction temperature (Tvj op) 150 °C
Gate-emitter peak voltage (VGES) ±20 V
Short-circuit current (ISC) 2400 A, tP ≤ 10 µs, Tvj = 150 °C
Integrated freewheeling diode 1200 V / 600 A, VF = 1.65 V
Diode peak reverse recovery current (IRM) 290 A (Tvj = 25 °C)
Diode recovered charge (Qr) 62 µC (Tvj = 25 °C)
Diode reverse recovery energy (Erec) 22 mJ (Tvj = 25 °C)
Integrated temperature sensor NTC, 5 kΩ @ 25 °C
Package: EconoDUAL™ 3, PressFIT, Cu baseplate, pre-applied TIM, Al₂O₃ internal insulation
Mounting torque: Module M5: 3–6 Nm, Terminals M6: 3–6 Nm
Technology: IGBT4 - E4

Title:
FF600R12ME4P_B11 | IGBT Module 1200V 600A EconoDUAL 3 – FOIND FF600R12ME4P_B11 Infineon EconoDUAL3 IGBT module 1200V 600A with integrated diode, NTC sensor, and PressFIT. FOIND solutions for industrial converters, motor drives, UPS systems, and wind turbines.